Trap-state mapping to model GaN transistors dynamic performance
On large-signal modeling of GaN HEMTs: past, development and future - ScienceDirect
Shape, Electronic Structure, and Trap States in Indium Phosphide Quantum Dots
Layout Considerations for GaN Transistor Circuits - Technical Articles
Full article: Application of phase-change materials in memory taxonomy
Trap-state mapping to model GaN transistors dynamic performance
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Identification of Star Defects in Gallium Nitride with HREBSD and ECCI, Microscopy and Microanalysis
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs
TCAD simulated probability of ionization (Ft,A,j) with the traps
Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors - Technical Articles
;BackgroundColor=ffffff)
